TK17N65W,S1F

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Mfr.Part #
TK17N65W,S1F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 650V 17.3A TO247
Stock
7,581
In Stock :
7,581

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
3.5V @ 900μA
Rds On Max :
200 mΩ
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 300V
Package / Case :
TO-247-3
Factory Lead Time :
16 Weeks
Current - Continuous Drain (Id) @ 25°C :
17.3A Ta
Power Dissipation-Max :
165W Tc
Operating Temperature :
150°C TJ
Published :
2014
Continuous Drain Current (ID) :
17.3A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
DTMOSIV
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance :
1.8nF
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Drain to Source Voltage (Vdss) :
650V
RoHS Status :
RoHS Compliant
Packaging :
Tube
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
200mOhm @ 8.7A, 10V
Mount :
Through Hole
Vgs (Max) :
±30V
Supplier Device Package :
TO-247
Datasheets
TK17N65W,S1F
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK17N65W,S1F from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, TK17N65W,S1F pinout, TK17N65W,S1F datasheet PDF, TK17N65W,S1F amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK17N65W,S1F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK17N65W,S1F


N-Channel Tube 200mOhm @ 8.7A, 10V ±30V 1800pF @ 300V 45nC @ 10V 650V TO-247-3

TK17N65W,S1F Overview


The maximum input capacitance of this device is 1800pF @ 300V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 17.3A.The drain-to-source voltage (Vdss) of this transistor needs to be at 650V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

TK17N65W,S1F Features


a continuous drain current (ID) of 17.3A
a 650V drain to source voltage (Vdss)


TK17N65W,S1F Applications


There are a lot of Toshiba Semiconductor and Storage
TK17N65W,S1F applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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