TK17E65W,S1X

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Mfr.Part #
TK17E65W,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 650V 17.3A TO220
Stock
821
In Stock :
821

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
17.3A Ta
Continuous Drain Current (ID) :
17.3A
Vgs (Max) :
±30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
650V
Vgs(th) (Max) @ Id :
3.5V @ 900μA
Factory Lead Time :
12 Weeks
Operating Temperature :
150°C TJ
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
RoHS Status :
RoHS Compliant
Package / Case :
TO-220-3
Series :
DTMOSIV
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
200m Ω @ 8.7A, 10V
Published :
2014
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 300V
Power Dissipation-Max :
165W Tc
Mounting Type :
Through Hole
Mount :
Through Hole
Datasheets
TK17E65W,S1X
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK17E65W,S1X from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, TK17E65W,S1X pinout, TK17E65W,S1X datasheet PDF, TK17E65W,S1X amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK17E65W,S1X ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK17E65W,S1X


N-Channel Tube 200m Ω @ 8.7A, 10V ±30V 1800pF @ 300V 45nC @ 10V 650V TO-220-3

TK17E65W,S1X Overview


The maximum input capacitance of this device is 1800pF @ 300V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 17.3A.The drain-to-source voltage (Vdss) of this transistor needs to be at 650V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

TK17E65W,S1X Features


a continuous drain current (ID) of 17.3A
a 650V drain to source voltage (Vdss)


TK17E65W,S1X Applications


There are a lot of Toshiba Semiconductor and Storage
TK17E65W,S1X applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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