TK17A80W,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Packaging :

Tube

Operating Temperature :

150°C

Drain to Source Resistance :

250mOhm

Factory Lead Time :

16 Weeks

Power Dissipation :

45W

Drain to Source Voltage (Vdss) :

800V

Power Dissipation-Max :

45W Tc

Continuous Drain Current (ID) :

17A

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Series :

DTMOSIV

Drain to Source Breakdown Voltage :

800V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

290mOhm @ 8.5A, 10V

Height :

18.1mm

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Turn-Off Delay Time :

80 ns

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 850μA

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

17A Ta

Supplier Device Package :

TO-220SIS

RoHS Status :

RoHS Compliant

Turn On Delay Time :

58 ns

Max Operating Temperature :

150°C

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 300V