TIPL770-S

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Mfr.Part #
TIPL770-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 2.5A TO220
Stock
32,514
In Stock :
32,514

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
10V
Power Dissipation :
50W
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 500mA 5V
Polarity/Channel Type :
NPN
Element Configuration :
Single
hFE Min :
20
Collector Emitter Voltage (VCEO) :
400V
Mount :
Through Hole
Frequency :
12MHz
Max Power Dissipation :
50W
Number of Elements :
1
Number of Pins :
3
Operating Temperature :
-65°C~150°C TJ
Max Collector Current :
2.5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
400V
Transistor Type :
NPN
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 500mA, 2.5A
Packaging :
Tube
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
5μA
Package / Case :
TO-220-3
Gain Bandwidth Product :
12MHz
Published :
1993
Collector Base Voltage (VCBO) :
850V
Datasheets
TIPL770-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. TIPL770-S from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, TIPL770-S pinout, TIPL770-S datasheet PDF, TIPL770-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. TIPL770-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. TIPL770-S


NPN -65°C~150°C TJ 5μA 1 Elements NPN TO-220-3 Tube Through Hole

TIPL770-S Overview


In this device, the DC current gain is 20 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 500mA, 2.5A.With the emitter base voltage set at 10V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 2.5A volts at Single BJT transistors maximum.

TIPL770-S Features


the DC current gain for this device is 20 @ 500mA 5V
the vce saturation(Max) is 2.5V @ 500mA, 2.5A
the emitter base voltage is kept at 10V


TIPL770-S Applications


There are a lot of Bourns Inc.
TIPL770-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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