TIPL760B-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 500mA 5V

Number of Terminations :

3

Published :

1993

Mounting Type :

Through Hole

Gain Bandwidth Product :

12MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Radiation Hardening :

No

Polarity/Channel Type :

NPN

hFE Min :

20

Case Connection :

COLLECTOR

Package / Case :

TO-220-3

Max Power Dissipation :

75W

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

10V

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

1100V

Transistor Application :

SWITCHING

Frequency :

12MHz

Collector Emitter Voltage (VCEO) :

500V

Collector Base Voltage (VCBO) :

1.1kV

JESD-609 Code :

e1

Number of Pins :

3

Number of Elements :

1

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

50μA

Mount :

Through Hole

Transition Frequency :

12MHz

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 2A

Collector Emitter Breakdown Voltage :

1.1kV

Power Dissipation :

75W

Operating Temperature :

-65°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

Max Collector Current :

4A

Packaging :

Tube

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Base Part Number :

TIPL760

Transistor Element Material :

SILICON