TIP29B PBFREE
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- Mfr.Part #
- TIP29B PBFREE
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO220-3
- Stock
- 3,076
- In Stock ：
- 3,076
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 3MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- MATTE TIN OVER NICKEL
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 125mA, 1A
- Operating Temperature :
- -65°C~150°C TJ
- Power - Max :
- 30W
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 24 Weeks
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 300μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 4V
- Current - Collector (Ic) (Max) :
- 1A
- Datasheets
- TIP29B PBFREE
NPN -65°C~150°C TJ 300μA TO-220-3 Bulk Through Hole
TIP29B PBFREE Overview
In this device, the DC current gain is 40 @ 200mA 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 125mA, 1A.The device exhibits a collector-emitter breakdown at 80V.
TIP29B PBFREE Features
the DC current gain for this device is 40 @ 200mA 4V
the vce saturation(Max) is 700mV @ 125mA, 1A
TIP29B PBFREE Applications
There are a lot of Central Semiconductor Corp
TIP29B PBFREE applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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