TIP29AG
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- Mfr.Part #
- TIP29AG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A TO220
- Stock
- 6,748
- In Stock ：
- 6,748
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Transition Frequency :
- 3MHz
- Operating Temperature :
- -65°C~150°C TJ
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 3MHz
- REACH SVHC :
- Unknown
- Transistor Element Material :
- SILICON
- Current Rating :
- 1A
- Published :
- 2005
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Max Breakdown Voltage :
- 25V
- Current - Collector Cutoff (Max) :
- 300μA
- JESD-609 Code :
- e3
- Frequency :
- 3MHz
- Number of Elements :
- 1
- hFE Min :
- 40
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- JEDEC-95 Code :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 2W
- Max Power Dissipation :
- 2W
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 125mA, 1A
- Collector Emitter Saturation Voltage :
- 700mV
- Packaging :
- Tube
- Factory Lead Time :
- 2 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Base Part Number :
- TIP29
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Datasheets
- TIP29AG
NPN -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
TIP29AG Overview
This device has a DC current gain of 15 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 125mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 25V volts can be used.A maximum collector current of 1A volts is possible.
TIP29AG Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
TIP29AG Applications
There are a lot of ON Semiconductor
TIP29AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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