TIP126
- Mfr.Part #
- TIP126
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 5A TO220-3
- Stock
- 180
- In Stock :
- 180
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- PNP
- Collector Emitter Saturation Voltage :
- 2V
- ECCN Code :
- EAR99
- Base Part Number :
- TIP12*
- Published :
- 2005
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 80V
- Pbfree Code :
- yes
- Surface Mount :
- No
- Gain Bandwidth Product :
- 4MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 3V
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 20mA, 5A
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Width :
- 4.826mm
- Factory Lead Time :
- 2 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP - Darlington
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 2W
- Case Connection :
- COLLECTOR
- Length :
- 10.2616mm
- Current - Collector Cutoff (Max) :
- 500μA
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-220-3
- Current Rating :
- -5A
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Height :
- 15.748mm
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 80V
- Voltage - Rated DC :
- -80V
- Number of Pins :
- 3
- hFE Min :
- 1000
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 5A
- Power Dissipation :
- 65W
- Collector Base Voltage (VCBO) :
- 80V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 5A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Datasheets
- TIP126

PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP126G Overview
In this device, the DC current gain is 1000 @ 3A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 20mA, 5A.A 5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
TIP126G Features
the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -5A
TIP126G Applications
There are a lot of ON Semiconductor
TIP126G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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