TIP125

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

JESD-609 Code :

e3

Number of Elements :

1

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

65W

Current Rating :

-5A

Transistor Type :

PNP - Darlington

Width :

4.6mm

Collector Emitter Breakdown Voltage :

60V

Power - Max :

2W

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

4V @ 20mA, 5A

Pin Count :

3

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Power Dissipation :

65W

Length :

10.4mm

Operating Temperature :

150°C TJ

hFE Min :

1000

Height :

15.75mm

Mount :

Through Hole

Mounting Type :

Through Hole

Base Part Number :

TIP125

VCEsat-Max :

4 V

Collector Base Voltage (VCBO) :

60V

JEDEC-95 Code :

TO-220AB

Polarity :

PNP

Max Collector Current :

5A

Current - Collector Cutoff (Max) :

500μA

Weight :

4.535924g

Transistor Element Material :

SILICON

Number of Pins :

3

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Package / Case :

TO-220-3

Number of Terminations :

3

Voltage - Rated DC :

-60V

Collector Emitter Saturation Voltage :

2V

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 3V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant