TIP120G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

10.28mm

hFE Min :

1000

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

4V @ 20mA, 5A

Pin Count :

3

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

60V

Contact Plating :

Tin

Transistor Application :

AMPLIFIER

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Manufacturer Package Identifier :

CASE 221A−09 ISSUE AH

Weight :

4.535924g

Voltage - Rated DC :

60V

Operating Temperature :

-65°C~150°C TJ

ECCN Code :

EAR99

Published :

1997

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Max Collector Current :

5A

Collector Emitter Saturation Voltage :

2V

Mounting Type :

Through Hole

Surface Mount :

No

Number of Terminations :

3

Height :

4.82mm

Collector Emitter Voltage (VCEO) :

60V

JESD-609 Code :

e3

Transistor Type :

NPN - Darlington

Base Part Number :

TIP12*

Emitter Base Voltage (VEBO) :

5V

Package / Case :

TO-220-3

Max Power Dissipation :

65W

RoHS Status :

ROHS3 Compliant

Power - Max :

2W

Current Rating :

5A

Continuous Collector Current :

5A

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 3V

Length :

15.75mm

Packaging :

Tube

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Polarity :

NPN

Power Dissipation :

65W

Number of Pins :

3

Collector Base Voltage (VCBO) :

60V

Current - Collector Cutoff (Max) :

500μA