TIP117
- Mfr.Part #
- TIP117
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A TO220
- Stock
- 12,397
- In Stock :
- 12,397
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 4.535924g
- Package / Case :
- TO-220-3
- hFE Min :
- 1000
- Operating Temperature :
- -65°C~150°C TJ
- Packaging :
- Tube
- Number of Pins :
- 3
- Published :
- 2006
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 2W
- Height :
- 15.748mm
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 100V
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Surface Mount :
- No
- Max Collector Current :
- 2A
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 25MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Length :
- 10.2616mm
- Contact Plating :
- Tin
- Continuous Collector Current :
- 2A
- Current Rating :
- -2A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- TIP11*
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Polarity :
- NPN
- Power Dissipation :
- 2W
- Collector Emitter Voltage (VCEO) :
- 100V
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Number of Elements :
- 1
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 2.5V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- JESD-609 Code :
- e3
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -100V
- Current - Collector Cutoff (Max) :
- 2mA
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Type :
- PNP - Darlington
- Width :
- 4.826mm
- Datasheets
- TIP117

PNP - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP117G Overview
In this device, the DC current gain is 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
TIP117G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
TIP117G Applications
There are a lot of ON Semiconductor
TIP117G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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