TIP117
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- Mfr.Part #
- TIP117
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A TO220
- Stock
- 212
- In Stock ：
- 212
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3
- Collector Emitter Saturation Voltage :
- 2.5V
- Surface Mount :
- No
- Pin Count :
- 3
- Power Dissipation :
- 2W
- Voltage - Rated DC :
- -100V
- hFE Min :
- 1000
- Transistor Type :
- PNP - Darlington
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Height :
- 15.748mm
- Width :
- 4.826mm
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- Collector Base Voltage (VCBO) :
- 100V
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 2mA
- Length :
- 10.2616mm
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Polarity :
- NPN
- Base Part Number :
- TIP11*
- Max Power Dissipation :
- 2W
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Voltage (VCEO) :
- 100V
- Contact Plating :
- Tin
- Published :
- 2006
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Weight :
- 4.535924g
- Number of Elements :
- 1
- Transition Frequency :
- 25MHz
- Current Rating :
- -2A
- Operating Temperature :
- -65°C~150°C TJ
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Continuous Collector Current :
- 2A
- Max Collector Current :
- 2A
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Datasheets
- TIP117
PNP - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP117G Overview
In this device, the DC current gain is 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
TIP117G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
TIP117G Applications
There are a lot of ON Semiconductor
TIP117G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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