TIP111G
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- Mfr.Part #
- TIP111G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 2A TO220
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 80V
- Collector Emitter Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Packaging :
- Tube
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 4.82mm
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Current - Collector Cutoff (Max) :
- 2mA
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Power Dissipation :
- 2W
- Current Rating :
- 2A
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 2W
- Height :
- 15.75mm
- Transistor Type :
- NPN - Darlington
- Operating Temperature :
- -65°C~150°C TJ
- hFE Min :
- 500
- Surface Mount :
- No
- Number of Pins :
- 3
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Max Collector Current :
- 2A
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Polarity :
- NPN
- Length :
- 10.28mm
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Number of Terminations :
- 3
- Factory Lead Time :
- 2 Weeks
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 2.5V
- Collector Emitter Voltage (VCEO) :
- 80V
- Transition Frequency :
- 440MHz
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 4.535924g
- ECCN Code :
- EAR99
- Base Part Number :
- TIP11*
- Max Breakdown Voltage :
- 80V
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Collector Base Voltage (VCBO) :
- 80V
- Published :
- 2001
- Datasheets
- TIP111G
NPN - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP111G Overview
In this device, the DC current gain is 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 440MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
TIP111G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 440MHz
TIP111G Applications
There are a lot of ON Semiconductor
TIP111G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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