TIP111

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Mfr.Part #
TIP111
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 2A TO220
Stock
7,373
In Stock :
7,373

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Terminal Finish :
Tin (Sn)
Width :
4.83mm
Transistor Element Material :
SILICON
Max Power Dissipation :
2W
Lead Free :
Lead Free
Packaging :
Tube
Published :
2008
Emitter Base Voltage (VEBO) :
5V
Package / Case :
TO-220-3
RoHS Status :
ROHS3 Compliant
hFE Min :
500
Polarity :
NPN
Number of Terminations :
3
Transistor Type :
NPN - Darlington
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Radiation Hardening :
No
Current - Collector Cutoff (Max) :
2mA
Voltage - Rated DC :
80V
JEDEC-95 Code :
TO-220AB
Base Part Number :
TIP111
Collector Emitter Voltage (VCEO) :
80V
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 8mA, 2A
Length :
10.67mm
Collector Emitter Saturation Voltage :
2.5V
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
80V
Max Collector Current :
2A
Collector Base Voltage (VCBO) :
80V
Factory Lead Time :
2 Weeks
Weight :
1.214g
Number of Pins :
3
Height :
16.51mm
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 1A 4V
Pbfree Code :
yes
Operating Temperature :
150°C TJ
Current Rating :
2A
Mount :
Through Hole
Mounting Type :
Through Hole
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
TIP111
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP111 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Terminations:3, Base Part Number:TIP111, Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, TIP111 pinout, TIP111 datasheet PDF, TIP111 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP111 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP111


NPN - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP111TU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 4V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 2A volts.

TIP111TU Features


the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A


TIP111TU Applications


There are a lot of ON Semiconductor
TIP111TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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