TIP111

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Mfr.Part #
TIP111
Manufacturer
Harris Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 2A TO220AB
Stock
7,373
In Stock :
7,373

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Manufacturer :
Harris Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
2mA
JESD-609 Code :
e3
Current Rating :
2A
Voltage - Rated DC :
80V
Width :
4.83mm
Collector Emitter Breakdown Voltage :
80V
Transistor Type :
NPN - Darlington
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 8mA, 2A
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 1A 4V
Collector Emitter Voltage (VCEO) :
80V
Published :
2008
Operating Temperature :
150°C TJ
Radiation Hardening :
No
Height :
16.51mm
Pbfree Code :
yes
JEDEC-95 Code :
TO-220AB
Base Part Number :
TIP111
hFE Min :
500
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
2.5V
Emitter Base Voltage (VEBO) :
5V
Mount :
Through Hole
Number of Terminations :
3
Package / Case :
TO-220-3
Terminal Finish :
Tin (Sn)
Polarity :
NPN
Max Power Dissipation :
2W
Length :
10.67mm
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Collector Base Voltage (VCBO) :
80V
Weight :
1.214g
Number of Pins :
3
Max Collector Current :
2A
Lead Free :
Lead Free
Factory Lead Time :
2 Weeks
Datasheets
TIP111
Introducing Transistors - Bipolar (BJT) - Single Harris Corporation TIP111 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:TIP111, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Pins:3, TIP111 pinout, TIP111 datasheet PDF, TIP111 amp .Beyond Transistors - Bipolar (BJT) - Single Harris Corporation TIP111 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Harris Corporation TIP111


NPN - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP111TU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 4V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 2A volts.

TIP111TU Features


the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A


TIP111TU Applications


There are a lot of ON Semiconductor
TIP111TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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