TIP110G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pbfree Code :

yes

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

2W

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Packaging :

Tube

ECCN Code :

EAR99

Continuous Collector Current :

2A

Contact Plating :

Tin

Radiation Hardening :

No

Max Collector Current :

2A

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 1A 4V

Collector Emitter Saturation Voltage :

2.5V

Number of Elements :

1

Voltage - Rated DC :

60V

Emitter Base Voltage (VEBO) :

5V

Current Rating :

2A

Transistor Type :

NPN - Darlington

hFE Min :

1000

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-220-3

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Number of Terminations :

3

Base Part Number :

TIP11*

Collector Emitter Breakdown Voltage :

60V

Element Configuration :

Single

Current - Collector Cutoff (Max) :

2mA

Operating Temperature :

-65°C~150°C TJ

JESD-609 Code :

e3

Power Dissipation :

2W

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Width :

4.826mm

Collector Base Voltage (VCBO) :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Length :

10.2616mm

Pin Count :

3

Collector Emitter Voltage (VCEO) :

60V

Factory Lead Time :

2 Weeks

Published :

1999

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 8mA, 2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

15.748mm

Weight :

4.535924g

Surface Mount :

No