TIP110
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- Mfr.Part #
- TIP110
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 2A TO220
- Stock
- 1,508
- In Stock ：
- 1,508
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- hFE Min :
- 1000
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 2.5V
- Power Dissipation :
- 2W
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Pin Count :
- 3
- Published :
- 1999
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 2mA
- Width :
- 4.826mm
- Transistor Type :
- NPN - Darlington
- Polarity :
- NPN
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- COLLECTOR
- Continuous Collector Current :
- 2A
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Current Rating :
- 2A
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Base Part Number :
- TIP11*
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Height :
- 15.748mm
- Max Power Dissipation :
- 2W
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Tube
- Length :
- 10.2616mm
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 60V
- Max Collector Current :
- 2A
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Weight :
- 4.535924g
- Datasheets
- TIP110
NPN - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP110G Overview
This device has a DC current gain of 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 8mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 2A volts is possible.
TIP110G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
TIP110G Applications
There are a lot of ON Semiconductor
TIP110G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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