TIP105

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Mfr.Part #
TIP105
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 60V 8A TO220-3
Stock
2,499
In Stock :
2,499

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
8 Weeks
Number of Elements :
1
Packaging :
Tube
Weight :
6.000006g
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 80mA, 8A
REACH SVHC :
No SVHC
Transistor Element Material :
SILICON
hFE Min :
200
Mount :
Through Hole
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
50μA
Package / Case :
TO-220-3
Height :
9.15mm
Width :
4.6mm
Power - Max :
2W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-220AB
Max Power Dissipation :
2W
Power Dissipation :
80W
Collector Base Voltage (VCBO) :
60V
Transistor Application :
SWITCHING
Emitter Base Voltage (VEBO) :
5V
Lead Free :
Lead Free
Terminal Finish :
Matte Tin (Sn)
RoHS Status :
ROHS3 Compliant
Max Collector Current :
8A
Number of Terminations :
3
Base Part Number :
TIP105
Collector Emitter Breakdown Voltage :
60V
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 3A 4V
Operating Temperature :
150°C TJ
Element Configuration :
Single
Pin Count :
3
Radiation Hardening :
No
Polarity :
PNP
Voltage - Rated DC :
-60V
Current Rating :
-8A
Mounting Type :
Through Hole
Collector Emitter Saturation Voltage :
2V
Number of Pins :
3
Transistor Type :
PNP - Darlington
ECCN Code :
EAR99
Length :
10.4mm
Collector Emitter Voltage (VCEO) :
60V
Datasheets
TIP105
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP105 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Terminations:3, Base Part Number:TIP105, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Pins:3, TIP105 pinout, TIP105 datasheet PDF, TIP105 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP105 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP105


PNP - Darlington 150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP105 Overview


In this device, the DC current gain is 2000 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 80mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-8A).Maximum collector currents can be below 8A volts.

TIP105 Features


the DC current gain for this device is 2000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A


TIP105 Applications


There are a lot of STMicroelectronics
TIP105 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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