TIP102TU

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Mfr.Part #
TIP102TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 8A TO220-3
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Transistor Type :
NPN - Darlington
Current Rating :
8A
Max Power Dissipation :
80W
Package / Case :
TO-220-3
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 80mA, 8A
Current - Collector Cutoff (Max) :
50μA
Terminal Finish :
Tin (Sn)
Voltage - Rated DC :
100V
Width :
4.83mm
REACH SVHC :
No SVHC
Transition Frequency :
80MHz
Radiation Hardening :
No
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 4V
Height :
9.4mm
Emitter Base Voltage (VEBO) :
5V
Pbfree Code :
yes
RoHS Status :
RoHS Compliant
Operating Temperature :
150°C TJ
Transistor Element Material :
SILICON
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Number of Pins :
3
Collector Emitter Breakdown Voltage :
100V
Base Part Number :
TIP102
Max Collector Current :
8A
Collector Emitter Saturation Voltage :
2V
hFE Min :
1000
Number of Elements :
1
Lead Free :
Lead Free
Collector Base Voltage (VCBO) :
100V
Published :
2008
JEDEC-95 Code :
TO-220AB
Weight :
1.214g
ECCN Code :
EAR99
Length :
10.67mm
Number of Terminations :
3
Element Configuration :
Single
Factory Lead Time :
5 Weeks
Collector Emitter Voltage (VCEO) :
100V
Power Dissipation :
2W
Polarity :
NPN
Mount :
Through Hole
Datasheets
TIP102TU
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP102TU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Pins:3, Base Part Number:TIP102, Number of Terminations:3, TIP102TU pinout, TIP102TU datasheet PDF, TIP102TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP102TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP102TU


NPN - Darlington 150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP102TU Overview


This device has a DC current gain of 1000 @ 3A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 8A.In this part, there is a transition frequency of 80MHz.The maximum collector current is 8A volts.

TIP102TU Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 80MHz


TIP102TU Applications


There are a lot of ON Semiconductor
TIP102TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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