TBC857B,LM
- Mfr.Part #
- TBC857B,LM
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SOT23-3
- Stock
- 19,819
- In Stock :
- 19,819
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Frequency - Transition :
- 80MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 100mA, 5mA
- Terminal Form :
- Gull wing
- Configuration :
- Single
- Max Breakdown Voltage :
- 50V
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 5V
- Reach Compliance Code :
- Unknown
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 30nA ICBO
- Transition Frequency :
- 80MHz
- JESD-30 Code :
- R-PDSO-G3
- Published :
- 2016
- Max Collector Current :
- 150mA
- Polarity/Channel Type :
- PNP
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 320mW
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Power - Max :
- 320mW
- Collector Emitter Voltage (VCEO) :
- 650mV
- Datasheets
- TBC857B,LM

PNP 150°C TJ 30nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
TBC857B,LM Overview
This device has a DC current gain of 210 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 100mA, 5mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.
TBC857B,LM Features
the DC current gain for this device is 210 @ 2mA 5V
the vce saturation(Max) is 650mV @ 100mA, 5mA
a transition frequency of 80MHz
TBC857B,LM Applications
There are a lot of Toshiba Semiconductor and Storage
TBC857B,LM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TBC847B,LM | Toshiba Electronic Devices and Storage Corporation | 114,886 | TRANS NPN 50V 0.15A SOT23-3 |
















