TBC857B,LM

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Mfr.Part #
TBC857B,LM
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 50V 0.15A SOT23-3
Stock
19,819
In Stock :
19,819

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
PNP
Number of Elements :
1
RoHS Status :
RoHS Compliant
Number of Terminations :
3
Frequency - Transition :
80MHz
Vce Saturation (Max) @ Ib, Ic :
650mV @ 100mA, 5mA
Terminal Form :
Gull wing
Configuration :
Single
Max Breakdown Voltage :
50V
Factory Lead Time :
12 Weeks
Packaging :
Tape and Reel (TR)
Mount :
Surface Mount
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
210 @ 2mA 5V
Reach Compliance Code :
Unknown
Collector Emitter Breakdown Voltage :
50V
Current - Collector Cutoff (Max) :
30nA ICBO
Transition Frequency :
80MHz
JESD-30 Code :
R-PDSO-G3
Published :
2016
Max Collector Current :
150mA
Polarity/Channel Type :
PNP
Transistor Application :
AMPLIFIER
Transistor Element Material :
SILICON
Max Power Dissipation :
320mW
Terminal Position :
Dual
Package / Case :
TO-236-3, SC-59, SOT-23-3
Operating Temperature :
150°C TJ
Mounting Type :
Surface Mount
Power - Max :
320mW
Collector Emitter Voltage (VCEO) :
650mV
Datasheets
TBC857B,LM
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation TBC857B,LM from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, TBC857B,LM pinout, TBC857B,LM datasheet PDF, TBC857B,LM amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation TBC857B,LM ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TBC857B,LM


PNP 150°C TJ 30nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

TBC857B,LM Overview


This device has a DC current gain of 210 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 100mA, 5mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.

TBC857B,LM Features


the DC current gain for this device is 210 @ 2mA 5V
the vce saturation(Max) is 650mV @ 100mA, 5mA
a transition frequency of 80MHz


TBC857B,LM Applications


There are a lot of Toshiba Semiconductor and Storage
TBC857B,LM applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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