TBC847B,LM

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Mfr.Part #
TBC847B,LM
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 50V 0.15A SOT23-3
Stock
114,886
In Stock :
114,886

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
50V
Transistor Type :
NPN
RoHS Status :
RoHS Compliant
Max Breakdown Voltage :
50V
Max Collector Current :
150mA
Operating Temperature :
150°C TJ
Published :
2016
Vce Saturation (Max) @ Ib, Ic :
400mV @ 100mA, 5mA
Package / Case :
TO-236-3, SC-59, SOT-23-3
Frequency - Transition :
100MHz
Mounting Type :
Surface Mount
Collector Emitter Voltage (VCEO) :
400mV
Power - Max :
320mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
12 Weeks
Max Power Dissipation :
320mW
Mount :
Surface Mount
Current - Collector (Ic) (Max) :
150mA
Current - Collector Cutoff (Max) :
30nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 5V
Supplier Device Package :
SOT-23
Voltage - Collector Emitter Breakdown (Max) :
50V
Packaging :
Tape and Reel (TR)
Datasheets
TBC847B,LM
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation TBC847B,LM from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, TBC847B,LM pinout, TBC847B,LM datasheet PDF, TBC847B,LM amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation TBC847B,LM ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TBC847B,LM


NPN 150°C TJ 30nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

TBC847B,LM Overview


In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 100mA, 5mA.An input voltage of 50V volts is the breakdown voltage.Supplier device package SOT-23 comes with the product.The device exhibits a collector-emitter breakdown at 50V.Maximum collector currents can be below 150mA volts.

TBC847B,LM Features


the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 400mV @ 100mA, 5mA
the supplier device package of SOT-23


TBC847B,LM Applications


There are a lot of Toshiba Semiconductor and Storage
TBC847B,LM applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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