SUP90P06-09L-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

200A

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

JESD-609 Code :

e3

Radiation Hardening :

No

Published :

2008

Number of Elements :

1

Threshold Voltage :

-1V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

90A Tc

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Series :

TrenchFET®

Power Dissipation :

2.4W

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Turn On Delay Time :

20 ns

Resistance :

9.3mOhm

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 30A, 10V

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Continuous Drain Current (ID) :

90A

FET Type :

P-Channel

Power Dissipation-Max :

2.4W Ta 250W Tc

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-60V

Width :

4.7mm

Number of Terminations :

3

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

300 ns

Max Junction Temperature (Tj) :

175°C

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Turn-Off Delay Time :

140 ns

Length :

10.41mm

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Height :

19.31mm

Drain to Source Voltage (Vdss) :

60V

Rise Time :

190ns

Weight :

6.000006g