SUP90140E-GE3
- Mfr.Part #
- SUP90140E-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 90A TO220AB
- Stock
- 4,458
- In Stock :
- 4,458
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~175°C TJ
- DS Breakdown Voltage-Min :
- 200V
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 30A, 10V
- Published :
- 2016
- Number of Terminations :
- 3
- Threshold Voltage :
- 4V
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 180 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- 90A
- Drain to Source Voltage (Vdss) :
- 200V
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Pulsed Drain Current-Max (IDM) :
- 240A
- REACH SVHC :
- Unknown
- Surface Mount :
- No
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain-source On Resistance-Max :
- 0.018Ohm
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 375W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4132pF @ 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 7.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 10V
- Packaging :
- Tube
- Terminal Position :
- Single
- Series :
- ThunderFET®
- Number of Elements :
- 1
- Factory Lead Time :
- 14 Weeks
- Datasheets
- SUP90140E-GE3
N-Channel Tube 17m Ω @ 30A, 10V ±20V 4132pF @ 100V 96nC @ 10V 200V TO-220-3
SUP90140E-GE3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 180 mJ.The maximum input capacitance of this device is 4132pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 90A.There is no pulsed drain current maximum for this device based on its rated peak drain current 240A.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 200V.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (7.5V 10V), this device helps reduce its power consumption.
SUP90140E-GE3 Features
the avalanche energy rating (Eas) is 180 mJ
a continuous drain current (ID) of 90A
based on its rated peak drain current 240A.
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)
SUP90140E-GE3 Applications
There are a lot of Vishay Siliconix
SUP90140E-GE3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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