SUP90N06-5M0P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Termination :

Through Hole

Avalanche Energy Rating (Eas) :

245 mJ

Drain-source On Resistance-Max :

0.005ohm

Transistor Application :

SWITCHING

Radiation Hardening :

No

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation :

3.75W

Pulsed Drain Current-Max (IDM) :

240A

Fall Time (Typ) :

8 ns

Pin Count :

3

FET Type :

N-Channel

Mounting Type :

Through Hole

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Turn On Delay Time :

23 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Dual Supply Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Number of Pins :

3

Packaging :

Strip

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

6190pF @ 30V

Series :

TrenchFET®

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Number of Elements :

1

Turn-Off Delay Time :

36 ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Vgs (Max) :

±20V

Rise Time :

15ns

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V

Package / Case :

TO-220-3

Published :

2009

Power Dissipation-Max :

3.75W Ta 300W Tc

Mount :

Through Hole

JESD-609 Code :

e3

Continuous Drain Current (ID) :

90A