SUM70101EL-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain-source On Resistance-Max :

0.0101Ohm

Pulsed Drain Current-Max (IDM) :

240A

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

100V

Avalanche Energy Rating (Eas) :

281 mJ

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

14 Weeks

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

375W Tc

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

100V

Surface Mount :

yes

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

10.1m Ω @ 30A, 10V

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Series :

TrenchFET®

Published :

2017

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 50V

Number of Elements :

1

ECCN Code :

EAR99

Terminal Finish :

Pure Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

120A

Terminal Position :

Single