SUM70040E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2016

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

4m Ω @ 20A, 10V

Avalanche Energy Rating (Eas) :

266 mJ

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 50V

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

100V

Vgs (Max) :

±20V

Threshold Voltage :

4V

Terminal Position :

Single

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

480A

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.004ohm

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

375W Tc

JESD-609 Code :

e3

ECCN Code :

EAR99

Number of Pins :

3

FET Type :

N-Channel

Number of Elements :

1

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Continuous Drain Current (ID) :

120A

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®