SUM70060E-GE3
- Mfr.Part #
- SUM70060E-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 131A TO263
- Stock
- 53
- In Stock :
- 53
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 375W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 131A Tc
- Factory Lead Time :
- 14 Weeks
- Rds On (Max) @ Id, Vgs :
- 5.6m Ω @ 30A, 10V
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- ThunderFET®
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 240A
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 7.5V 10V
- Packaging :
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs :
- 81nC @ 10V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain-source On Resistance-Max :
- 0.0062Ohm
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 100V
- Continuous Drain Current (ID) :
- 131A
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 125 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 3330pF @ 50V
- Vgs (Max) :
- ±20V
- Published :
- 2017
- Datasheets
- SUM70060E-GE3
N-Channel Cut Tape (CT) 5.6m Ω @ 30A, 10V ±20V 3330pF @ 50V 81nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM70060E-GE3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 125 mJ.The maximum input capacitance of this device is 3330pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 131A.There is no pulsed drain current maximum for this device based on its rated peak drain current 240A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (7.5V 10V), this device helps reduce its power consumption.
SUM70060E-GE3 Features
the avalanche energy rating (Eas) is 125 mJ
a continuous drain current (ID) of 131A
based on its rated peak drain current 240A.
a 100V drain to source voltage (Vdss)
SUM70060E-GE3 Applications
There are a lot of Vishay Siliconix
SUM70060E-GE3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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