SUM55P06-19L-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

55A

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Lead Free :

Lead Free

Number of Elements :

1

Series :

TrenchFET®

Continuous Drain Current (ID) :

-5.5A

Turn-Off Delay Time :

80 ns

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

125W

Height :

4.83mm

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Pin Count :

4

Weight :

1.437803g

Published :

2007

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Rds On (Max) @ Id, Vgs :

19m Ω @ 30A, 10V

Number of Pins :

3

Contact Plating :

Tin

Factory Lead Time :

14 Weeks

FET Type :

P-Channel

Transistor Application :

SWITCHING

Threshold Voltage :

-1V

Width :

9.65mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

ECCN Code :

EAR99

Rise Time :

15ns

Power Dissipation-Max :

3.75W Ta 125W Tc

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Mounting Type :

Surface Mount

JESD-609 Code :

e3

REACH SVHC :

Unknown

Mount :

Surface Mount

Number of Channels :

1

Number of Terminations :

2

Resistance :

19mOhm

Fall Time (Typ) :

230 ns

Turn On Delay Time :

12 ns

Radiation Hardening :

No

Length :

10.41mm

Drain to Source Breakdown Voltage :

-60V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)