SUM50P10-42-E3
- Mfr.Part #
- SUM50P10-42-E3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 36A TO263
- Stock
- 18,758
- In Stock :
- 18,758
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 50V
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 14A, 10V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 36A
- Power Dissipation :
- 18.8W
- Transistor Element Material :
- SILICON
- Series :
- TrenchFET®
- Mount :
- Surface Mount
- Terminal Position :
- Single
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 18.8W Ta 125W Tc
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.042Ohm
- Pin Count :
- 4
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 40A
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Unknown
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- Datasheets
- SUM50P10-42-E3
N-Channel Tape & Reel (TR) 4.2m Ω @ 14A, 10V ±20V 4600pF @ 50V 160nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM50P10-42-E3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 80 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4600pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 40A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SUM50P10-42-E3 Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 36A
based on its rated peak drain current 40A.
a 100V drain to source voltage (Vdss)
SUM50P10-42-E3 Applications
There are a lot of Vishay Siliconix
SUM50P10-42-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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