SUM50020EL-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

281 mJ

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

126nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

14 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

DS Breakdown Voltage-Min :

60V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

11113pF @ 30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 30A, 10V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

375W Tc

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

300A

Vgs (Max) :

±20V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

120A

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain-source On Resistance-Max :

0.0021Ohm

Series :

TrenchFET®

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

60V

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2016

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE