SUM27N20-78-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

3.75W

Pulsed Drain Current-Max (IDM) :

60A

Turn On Delay Time :

15 ns

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Turn-Off Delay Time :

40 ns

Pin Count :

4

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

78m Ω @ 20A, 10V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Radiation Hardening :

No

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 25V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Terminations :

2

Pbfree Code :

yes

Fall Time (Typ) :

30 ns

Length :

10.41mm

JESD-609 Code :

e3

Power Dissipation-Max :

3.75W Ta 150W Tc

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

4 V

Resistance :

78mOhm

Mounting Type :

Surface Mount

Number of Elements :

1

Continuous Drain Current (ID) :

27A

REACH SVHC :

Unknown

Width :

9.65mm

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Height :

4.83mm

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Rise Time :

35ns

Number of Pins :

3

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

200V