SUM23N15-73-E3
- Mfr.Part #
- SUM23N15-73-E3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 23A TO263
- Stock
- 26,911
- In Stock :
- 26,911
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2017
- Vgs (Max) :
- ±20V
- Rise Time :
- 60ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- REACH SVHC :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Continuous Drain Current (ID) :
- 23A
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Fall Time (Typ) :
- 45 ns
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 73m Ω @ 15A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 3.75W Ta 100W Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 30 ns
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 10 ns
- Resistance :
- 73mOhm
- Pin Count :
- 4
- Threshold Voltage :
- 4V
- Drain to Source Breakdown Voltage :
- 150V
- Power Dissipation :
- 3.75W
- Nominal Vgs :
- 4 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1290pF @ 25V
- Series :
- TrenchFET®
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Datasheets
- SUM23N15-73-E3
N-Channel Tape & Reel (TR) 73m Ω @ 15A, 10V ±20V 1290pF @ 25V 35nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM23N15-73-E3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1290pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 23A.With a drain-source breakdown voltage of 150V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 150V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (6V 10V) reduces this device's overall power consumption.
SUM23N15-73-E3 Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 30 ns
a threshold voltage of 4V
SUM23N15-73-E3 Applications
There are a lot of Vishay Siliconix
SUM23N15-73-E3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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