SUM25P10-138-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®

Pulsed Drain Current-Max (IDM) :

40A

Rds On (Max) @ Id, Vgs :

13.8m Ω @ 6A, 10V

DS Breakdown Voltage-Min :

100V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

16.7A Tc

Number of Elements :

1

Mount :

Surface Mount

Continuous Drain Current (ID) :

16.7A

Terminal Position :

Single

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2110pF @ 25V

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.142Ohm

Polarity/Channel Type :

P-Channel

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Published :

2009

Power Dissipation-Max :

3.75W Ta 88.2W Tc

REACH SVHC :

No SVHC

JESD-30 Code :

R-PSSO-G2