SUD23N06-31L-T4-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3W Ta 100W Tc

DS Breakdown Voltage-Min :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

31m Ω @ 15A, 10V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Transistor Element Material :

SILICON

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.031Ohm

Terminal Form :

Gull wing

Terminal Position :

Single

Factory Lead Time :

14 Weeks

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

TrenchFET®

Published :

2009

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

Avalanche Energy Rating (Eas) :

20 mJ

Pulsed Drain Current-Max (IDM) :

50A

Drain to Source Voltage (Vdss) :

60V

Drain Current-Max (Abs) (ID) :

23A