SUD23N06-31L-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Turn-Off Delay Time :

30 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Height :

2.3876mm

Pin Count :

4

Drain to Source Breakdown Voltage :

60V

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Lead Free :

Lead Free

Width :

6.22mm

Dual Supply Voltage :

60V

Transistor Application :

SWITCHING

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

31m Ω @ 15A, 10V

Mounting Type :

Surface Mount

Weight :

1.437803g

Published :

2008

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Factory Lead Time :

12 Weeks

Rise Time :

15ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

100W

Turn On Delay Time :

8 ns

Resistance :

31mOhm

Power Dissipation-Max :

3W Ta 100W Tc

Length :

6.7056mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Continuous Drain Current (ID) :

23A

Case Connection :

DRAIN

Termination :

SMD/SMT

Avalanche Energy Rating (Eas) :

20 mJ

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

50A

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

ECCN Code :

EAR99

Element Configuration :

Single

Nominal Vgs :

2 V

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

25 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Threshold Voltage :

2V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1