SUD23N06-31-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

250ns

Continuous Drain Current (ID) :

9.1A

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Mount :

Surface Mount

FET Type :

N-Channel

Length :

6.73mm

Mounting Type :

Surface Mount

Pbfree Code :

yes

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Turn-Off Delay Time :

35 ns

Fall Time (Typ) :

68 ns

Element Configuration :

Single

Pin Count :

4

Number of Terminations :

2

Resistance :

31mOhm

Number of Pins :

3

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Factory Lead Time :

14 Weeks

Power Dissipation :

5.7W

Contact Plating :

Tin

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

60V

Height :

2.39mm

Operating Mode :

ENHANCEMENT MODE

Weight :

1.437803g

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Published :

2009

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Number of Channels :

1

ECCN Code :

EAR99

Turn On Delay Time :

18 ns

Pulsed Drain Current-Max (IDM) :

50A

Current - Continuous Drain (Id) @ 25°C :

21.4A Tc

Power Dissipation-Max :

5.7W Ta 31.25W Tc

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Avalanche Energy Rating (Eas) :

20 mJ

JESD-30 Code :

R-PSSO-G2

Threshold Voltage :

3V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

31m Ω @ 15A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Width :

6.22mm

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC