SUD09P10-195-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Resistance :

195mOhm

Threshold Voltage :

-1V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1055pF @ 50V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

33 ns

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Series :

TrenchFET®

Number of Channels :

1

Fall Time (Typ) :

9 ns

Drain to Source Breakdown Voltage :

-100V

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

8.8A Tc

Pin Count :

4

Continuous Drain Current (ID) :

-8.8A

Rise Time :

12ns

Case Connection :

DRAIN

Turn On Delay Time :

7 ns

Factory Lead Time :

14 Weeks

Radiation Hardening :

No

Height :

2.507mm

RoHS Status :

ROHS3 Compliant

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

34.8nC @ 10V

Power Dissipation :

2.5W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Elements :

1

Lead Free :

Lead Free

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

100V

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

2.5W Ta 32.1W Tc

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

195m Ω @ 3.6A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)