SUD08P06-155L-E3
- Mfr.Part #
- SUD08P06-155L-E3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 8.4A TO252
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 7 ns
- Continuous Drain Current (ID) :
- -8.4A
- Power Dissipation-Max :
- 2W Ta 25W Tc
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Length :
- 6.7056mm
- Drain to Source Resistance :
- 155mOhm
- Lead Free :
- Lead Free
- Series :
- TrenchFET®
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 155mOhm @ 5A, 10V
- Threshold Voltage :
- -2V
- Width :
- 6.223mm
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance :
- 450pF
- Drain to Source Breakdown Voltage :
- -60V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn On Delay Time :
- 5 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 8.4A Tc
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2W
- Max Operating Temperature :
- 175°C
- Height :
- 2.3876mm
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 15 ns
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Rds On Max :
- 155 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 25V
- Vgs (Max) :
- ±20V
- Published :
- 2009
- FET Type :
- P-Channel
- Supplier Device Package :
- TO-252, (D-Pak)
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 14ns
- Resistance :
- 155mOhm
- Datasheets
- SUD08P06-155L-E3
P-Channel Tape & Reel (TR) 155mOhm @ 5A, 10V ±20V 450pF @ 25V 19nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
SUD08P06-155L-E3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 450pF @ 25V.This device conducts a continuous drain current (ID) of -8.4A, which is the maximum continuous current transistor can conduct.Using VGS=-60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 155mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SUD08P06-155L-E3 Features
a continuous drain current (ID) of -8.4A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 155mOhm
a threshold voltage of -2V
a 60V drain to source voltage (Vdss)
SUD08P06-155L-E3 Applications
There are a lot of Vishay Siliconix
SUD08P06-155L-E3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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