STX112-AP
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- Mfr.Part #
- STX112-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A TO92AP
- Stock
- 18,912
- In Stock ：
- 18,912
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Collector Current :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Terminal Form :
- Wire
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 100V
- Current - Collector Cutoff (Max) :
- 2mA
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 2.5V
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 0.0067
- Polarity :
- NPN
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 100V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Current Rating :
- 2A
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Element Configuration :
- Single
- Mount :
- Through Hole
- Base Part Number :
- STX112
- Max Power Dissipation :
- 1.2W
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 100V
- Terminal Finish :
- Matte Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Collector Base Voltage (VCBO) :
- 100V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 500
- Datasheets
- STX112-AP
NPN - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
STX112-AP Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 1A 4V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 8mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
STX112-AP Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
STX112-AP Applications
There are a lot of STMicroelectronics
STX112-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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