STX117-AP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Mount :

Through Hole

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

100V

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 0.0067

Terminal Position :

BOTTOM

Height :

4.5mm

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Through Hole

Width :

3.8mm

Max Power Dissipation :

1.2W

Collector Emitter Voltage (VCEO) :

100V

Transistor Application :

SWITCHING

Polarity/Channel Type :

PNP

hFE Min :

500

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 1A 4V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Form :

Wire

Element Configuration :

Single

Pbfree Code :

yes

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Collector Emitter Saturation Voltage :

2.5V

Radiation Hardening :

No

Transistor Type :

PNP

Base Part Number :

STX117

Collector Base Voltage (VCBO) :

100V

Current - Collector Cutoff (Max) :

2mA

Packaging :

Tape and Box (TB)

Operating Temperature :

150°C TJ

Number of Elements :

1

Power Dissipation :

800mW

Max Collector Current :

2A

Number of Terminations :

3

Length :

4.8mm

Pin Count :

3

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Power - Max :

1.2W

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 8mA, 2A

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn)