STW78N65M5
- Mfr.Part #
- STW78N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 69A TO247
- Stock
- 13,461
- In Stock :
- 13,461
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 34.5A, 10V
- Packaging :
- Tube
- Turn-Off Delay Time :
- 26 ns
- Vgs (Max) :
- ±25V
- Mount :
- Through Hole
- Power Dissipation-Max :
- 450W Tc
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Power Dissipation :
- 450W
- Length :
- 15.75mm
- Factory Lead Time :
- 17 Weeks
- FET Type :
- N-Channel
- Height :
- 20.15mm
- RoHS Status :
- ROHS3 Compliant
- Width :
- 5.15mm
- Rise Time :
- 14ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 163 ns
- Continuous Drain Current (ID) :
- 69A
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 100V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 69A Tc
- Series :
- Automotive, AEC-Q101, MDmesh™ V
- Base Part Number :
- STW78N
- Gate to Source Voltage (Vgs) :
- 25V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Package / Case :
- TO-247-3
- Pulsed Drain Current-Max (IDM) :
- 276A
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 650V
- Gate Charge (Qg) (Max) @ Vgs :
- 203nC @ 10V
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 14 ns
- Datasheets
- STW78N65M5

N-Channel Tube 32m Ω @ 34.5A, 10V ±25V 9000pF @ 100V 203nC @ 10V TO-247-3
STW78N65M5 Description
The STW78N65M5 device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
STW78N65M5 Features
-
Designed for automotive applications and AEC-Q101 qualified
-
Higher VDSS rating
-
Higher dv/dt capability
-
Excellent switching performance
-
Easy to drive
-
100% avalanche tested
-
ROHS3 Compliant
-
Lead Free
STW78N65M5 Applications
-
Switching applications
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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