STW75N60M6-4
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- Mfr.Part #
- STW75N60M6-4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-4
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 72A TO247-4
- Stock
- 22,745
- In Stock ：
- 22,745
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.75V @ 250μA
- Factory Lead Time :
- 16 Weeks
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Compliant
- Vgs (Max) :
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4850pF @ 100V
- Power Dissipation-Max :
- 446W Tc
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 36A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-247-4
- Base Part Number :
- STW75N
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 106nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 72A Tc
- Drain to Source Voltage (Vdss) :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- MDmesh™ M6
- Datasheets
- STW75N60M6-4
N-Channel 36m Ω @ 36A, 10V ±25V 4850pF @ 100V 106nC @ 10V 600V TO-247-4
STW75N60M6-4 Description
The most recent improvements to the well-known and consolidated MDmesh family of SJ MOSFETs are incorporated into the new MDmeshTM M6 technology. With its brand-new M6 technology, STMicroelectronics improves on the previous generation of MDmesh devices by combining great RDS(on) per area improvement with one of the most efficient switching behaviors available, as well as a user-friendly interface for optimal end-application efficiency.
STW75N60M6-4 Features
-
cut down on switching losses
-
Less RDS(on) per area compared to the previous generation
-
Minimal input gate resistance
-
Complete avalanche testing
-
Zener-defended
-
The additional driving source pin results in excellent switching performance.
STW75N60M6-4 Applications
-
Change of applications
-
Converters for LLCs
-
PFC converter boosters
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