STW75N20

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

75A

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

53 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

FET Type :

N-Channel

Operating Temperature :

-50°C~150°C TJ

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

75 ns

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Avalanche Energy Rating (Eas) :

205 mJ

Power Dissipation :

190W

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

3260pF @ 25V

Current Rating :

75A

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

300A

Vgs (Max) :

±20V

Packaging :

Tube

Drain-source On Resistance-Max :

0.034Ohm

Base Part Number :

STW75N

JESD-30 Code :

R-PSFM-T3

Radiation Hardening :

No

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Rise Time :

33ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

225

Fall Time (Typ) :

29 ns

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

34m Ω @ 37A, 10V

Package / Case :

TO-247-3

Element Configuration :

Single

Mount :

Through Hole

Series :

STripFET™

Power Dissipation-Max :

190W Tc

Transistor Application :

SWITCHING

Voltage - Rated DC :

200V