STW77N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

276A

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Series :

MDmesh™ V

Number of Terminations :

3

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Base Part Number :

STW77N

Continuous Drain Current (ID) :

69A

Width :

5.15mm

Number of Elements :

1

Package / Case :

TO-247-3

Resistance :

38mOhm

Packaging :

Tube

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

9800pF @ 100V

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

JESD-609 Code :

e3

Power Dissipation :

400W

Element Configuration :

Single

Transistor Application :

SWITCHING

Fall Time (Typ) :

20 ns

Power Dissipation-Max :

400W Tc

Drain to Source Breakdown Voltage :

650V

Pin Count :

3

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Length :

15.75mm

Current - Continuous Drain (Id) @ 25°C :

69A Tc

Threshold Voltage :

4V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Factory Lead Time :

17 Weeks

Gate to Source Voltage (Vgs) :

25V

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

38m Ω @ 34.5A, 10V

Avalanche Energy Rating (Eas) :

2000 mJ

Height :

20.15mm

Rise Time :

22ns