STU2N95K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

8.5 ns

Rise Time :

13.5ns

Base Part Number :

STU2N

Drain to Source Breakdown Voltage :

950V

Input Capacitance (Ciss) (Max) @ Vds :

105pF @ 100V

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Power Dissipation-Max :

45W Tc

Element Configuration :

Single

Factory Lead Time :

17 Weeks

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Turn-Off Delay Time :

20.5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

8A

Height :

6.2mm

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

5 Ω @ 1A, 10V

Length :

6.6mm

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Series :

SuperMESH5™

Avalanche Energy Rating (Eas) :

50 mJ

Fall Time (Typ) :

32.5 ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Packaging :

Tube

Number of Channels :

1

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 100µA

Drain Current-Max (Abs) (ID) :

2A

ECCN Code :

EAR99

Width :

2.4mm

Mount :

Through Hole

Continuous Drain Current (ID) :

2A

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Drain-source On Resistance-Max :

5Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

3.949996g

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE