STU2N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.1A, 10V

Threshold Voltage :

3.75V

Avalanche Energy Rating (Eas) :

85 mJ

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Drain to Source Breakdown Voltage :

620V

Turn On Delay Time :

8 ns

Height :

6.9mm

Power Dissipation :

45W

Vgs (Max) :

±30V

Power Dissipation-Max :

45W Tc

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Width :

2.4mm

Pin Count :

3

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

ULTRA-LOW RESISTANCE

Series :

SuperMESH3™

Resistance :

3.6Ohm

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Operating Temperature :

150°C TJ

Pulsed Drain Current-Max (IDM) :

8.8A

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 50V

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Element Configuration :

Single

Radiation Hardening :

No

Fall Time (Typ) :

22 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

21 ns

Length :

6.6mm

Base Part Number :

STU2N

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Rise Time :

4.4ns

Transistor Application :

SWITCHING

Number of Terminations :

3

Number of Pins :

3

Mounting Type :

Through Hole

ECCN Code :

EAR99

Number of Elements :

1

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

2.2A