STR2550
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- Mfr.Part #
- STR2550
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 500V 0.5A SOT23-3
- Stock
- 2,970
- In Stock ：
- 2,970
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 1.75mm
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Emitter Base Voltage (VEBO) :
- -7V
- Collector Base Voltage (VCBO) :
- -500V
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 500V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Terminations :
- 3
- Max Power Dissipation :
- 500mW
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -300mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 500V
- Base Part Number :
- STR1550
- Number of Pins :
- 3
- Height :
- 1.3mm
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Max Collector Current :
- 500mA
- Mounting Type :
- Surface Mount
- hFE Min :
- 10
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Factory Lead Time :
- 8 Weeks
- REACH SVHC :
- No SVHC
- Length :
- 3.04mm
- Power - Max :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 50mA
- Packaging :
- Cut Tape (CT)
- Collector Emitter Voltage (VCEO) :
- 500V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Datasheets
- STR2550
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
STR2550 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 50mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.An input voltage of 500V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
STR2550 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
STR2550 Applications
There are a lot of STMicroelectronics
STR2550 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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