STR2N2VH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

14 Weeks

Number of Terminations :

3

Power Dissipation :

350mW

Height :

1.3mm

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Element Configuration :

Single

Packaging :

Cut Tape (CT)

Number of Elements :

1

Gate to Source Voltage (Vgs) :

8V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

700mV @ 250μA (Min)

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Continuous Drain Current (ID) :

2.3A

Length :

3.04mm

FET Type :

N-Channel

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Base Part Number :

STR2

Vgs (Max) :

±8V

Drain to Source Breakdown Voltage :

20V

Rds On (Max) @ Id, Vgs :

30m Ω @ 2A, 4.5V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Resistance :

30mOhm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

367pF @ 16V

Width :

1.75mm

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 4.5V

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation-Max :

350mW Tc

Series :

STripFET™ V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING