STP4NK80ZFP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

STP4N

Pin Count :

3

Terminal Finish :

Matte Tin (Sn) - annealed

Radiation Hardening :

No

Vgs (Max) :

±30V

Series :

SuperMESH™

JESD-609 Code :

e3

Rise Time :

12ns

Fall Time (Typ) :

32 ns

Width :

4.6mm

Continuous Drain Current (ID) :

3A

Resistance :

3.5Ohm

Power Dissipation :

25W

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 1.5A, 10V

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Height :

9.3mm

Input Capacitance (Ciss) (Max) @ Vds :

575pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

35 ns

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Package / Case :

TO-220-3 Full Pack

Pulsed Drain Current-Max (IDM) :

12A

Mount :

Through Hole

Drain to Source Breakdown Voltage :

800V

Number of Pins :

3

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

190 mJ

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Turn On Delay Time :

13 ns

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

25W Tc

Length :

10.4mm

Case Connection :

Isolated

Number of Elements :

1

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

3A

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

22.5nC @ 10V