STP40N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

2V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.088Ohm

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Vgs (Max) :

±25V

Case Connection :

DRAIN

Power Dissipation :

250W

Radiation Hardening :

No

Number of Terminations :

3

Number of Channels :

1

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

Drain to Source Breakdown Voltage :

600V

Continuous Drain Current (ID) :

34A

Turn-Off Delay Time :

96 ns

Rise Time :

13.5ns

Turn On Delay Time :

20.5 ns

Number of Elements :

1

Base Part Number :

STP40N

Element Configuration :

Single

Lead Free :

Lead Free

Mount :

Through Hole

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 100V

Rds On (Max) @ Id, Vgs :

88m Ω @ 17A, 10V

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Series :

MDmesh™ II Plus

Weight :

329.988449mg

Gate to Source Voltage (Vgs) :

25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

19.68mm

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

500 mJ

Max Junction Temperature (Tj) :

150°C

Power Dissipation-Max :

250W Tc

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Fall Time (Typ) :

11 ns

RoHS Status :

ROHS3 Compliant